Part Number Hot Search : 
IRF82 SD103C NDL5481P CM600 0M26V MAX4000 C2050IS BT5401
Product Description
Full Text Search
 

To Download RU30160S Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
  RU30160S n-channel advanced power mosfet symbol rating unit v dss 30 v gss 20 t j 175 c t stg -55 to 175 c i s t c =25c 160 a i dp t c =25c 640 a t c =25c 160 t c =100c 113 t c =25c 188 t c =100c 94 r jc 0.8 c/w r ja 62.5 c/w e as 400 mj ruichips semiconductor co., ltd rev. a? dec., 2013 1 www.ruichips.com pin description features applications absolute maximum ratings to263 n-channel mosfet parameter common ratings (t c =25c unless otherwise noted) ? 30v/160a, r ds (on) =2.3m(typ.)@v gs =10v ? super high dense cell design ? ultra low on-resistance ? 100% avalanche tested ? lead free and green devices available (rohs compliant) ? dc-dc converters drain-source voltage v gate-source voltage maximum junction temperature storage temperature range thermal resistance-junction to case drain-source avalanche ratings avalanche energy, single pulsed diode continuous forward current 300s pulse drain current tested continuous drain current(v gs =10v) maximum power dissipation mounted on large heat sink i d a p d w thermal resistance-junction to ambient g s d d s g
RU30160S min. typ. max. bv dss drain-source breakdown voltage 30 v 1 t j =125c 30 v gs(th) gate threshold voltage 2 3 4 v i gss gate leakage current 100 na r ds(on) drain-source on-state resistance 2.3 3.5 m v sd diode forward voltage 1.2 v t rr reverse recovery time 45 ns q rr reverse recovery charge 90 nc r g gate resistance 1.8 c iss input capacitance 3970 c oss output capacitance 660 c rss reverse transfer capacitance 350 t d(on) turn-on delay time 30 t r turn-on rise time 105 t d(off) turn-off delay time 83 t f turn-off fall time 45 q g total gate charge 96 q gs gate-source charge 18 q gd gate-drain charge 28 notes: ruichips semiconductor co., ltd rev. a? dec., 2013 2 www.ruichips.com electrical characteristics (t c =25c unless otherwise noted) v dd =15v, r l =0.2, i ds =75a, v gen =10v, r g =4.7 v ds =24v, v gs =10v, i ds =75a pulse width limited by safe operating area. calculated continuous current based on maximum allowable junction temperature. the package limitation current is 75a. limited by t jmax , i as =40a, v dd = 48v, r g = 50 , starting t j = 25c. pulse test;pulse width 300s, duty cycle 2%. guaranteed by design, not subject to production testing. gate charge characteristics nc ns i sd =75a, v gs =0v i sd =75a, dl sd /dt=100a/s v gs =0v,v ds =0v,f=1mhz v gs =0v, v ds =15v, frequency=1.0mhz pf dynamic characteristics v gs =20v, v ds =0v v gs =10v, i ds =75a diode characteristics v ds =v gs , i ds =250a static characteristics symbol parameter test condition RU30160S unit v gs =0v, i ds =250a i dss zero gate voltage drain current v ds =30v, v gs =0v a
RU30160S device marking package packaging quantity reel size tape width RU30160S RU30160S to263 tube 50 - - ruichips semiconductor co., ltd rev. a? dec., 2013 3 www.ruichips.com ordering and marking information
RU30160S ruichips semiconductor co., ltd rev. a? dec., 2013 4 www.ruichips.com typical characteristics 0 20 40 60 80 100 120 140 160 180 25 50 75 100 125 150 175 i d - drain current (a) t j - junction temperature ( c) drain current v gs =10v 0 1 2 3 4 5 0 1 2 3 4 5 6 7 8 9 10 r ds(on) - on - resistance (m ) v gs - gate - source voltage (v) drain current i ds =75a 0 20 40 60 80 100 120 140 160 180 200 0 25 50 75 100 125 150 175 p d - power (w) t j - junction temperature ( c) power dissipation 0.1 1 10 100 1000 0.01 0.1 1 10 100 i d - drain current (a) v ds - drain - source voltage (v) safe operation area 10 s 100 s 1ms 10ms dc r ds(on) limited t c =25 c 0.001 0.01 0.1 1 1e -05 0.0001 0.001 0.01 0.1 1 zthjc - thermal response ( c/w) square wave pulse duration (sec) thermal transient impedance single pulse duty=0.5, 0.2, 0.1, 0.05, 0.02, 0.01, single pulse r jc = 0.8 c/w
RU30160S ruichips semiconductor co., ltd rev. a? dec., 2013 5 www.ruichips.com typical characteristics 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 i d - drain current (a) v ds - drain - source voltage (v) output characteristics 3v 5v 6v v gs =8,9,10v 0 2 4 6 8 10 0 20 40 60 80 100 r ds(on) - on resistance (m) i d - drain current (a) drain - source on resistance 10v 0.0 0.5 1.0 1.5 2.0 2.5 - 50 - 25 0 25 50 75 100 125 150 175 normalized on resistance t j - junction temperature ( c) drain - source on resistance v gs =10v i ds =75a t j =25 c rds(on)=2.3m 0.1 1.0 10.0 100.0 0.2 0.4 0.6 0.8 1 1.2 1.4 i s - source current (a) v sd - source - drain voltage (v) source - drain diode forward t j =25 c t j =175 c 0 500 1000 1500 2000 2500 3000 3500 4000 4500 5000 1 10 100 c - capacitance (pf) v ds - drain - source voltage (v) capacitance ciss coss crss frequency=1.0mhz 0 1 2 3 4 5 6 7 8 9 10 0 50 100 150 v gs - gate - source voltage (v) q g - gate charge (nc) gate charge v ds =24v i ds =75a
RU30160S ruichips semiconductor co., ltd rev. a? dec., 2013 6 www.ruichips.com avalanche test circuit and waveforms switching time test circuit and waveforms
RU30160S ruichips semiconductor co., ltd rev. a? dec., 2013 7 www.ruichips.com package information to263 2 c1 dep a2 c l l4 a1 1 a 2 1 h e l3 d l2 b1 b l1 e min nom max min nom max min nom max min nom max a 4.40 4.55 4.70 0.173 0.179 0.185 l 2.00 2.30 2.60 0.079 0.091 0.102 a1 0.00 0.10 0.25 0.000 0.005 0.010 l3 1.17 1.29 1.40 0.046 0.051 0.055 a2 2.59 2.69 2.79 0.102 0.106 0.110 l1 * * 1.70 * * 0.067 b 0.77 * 0.90 0.030 0.035 l4 b1 1.23 * 1.36 0.048 0.054 l2 c 0.34 * 0.47 0.013 0.019 0 * 8 0 * 8 c1 1.22 * 1.32 0.048 0.052 1 5 7 9 5 7 9 d 8.60 8.70 8.80 0.339 0.343 0.346 2 1 3 5 1 3 5 e 10.00 10.13 10.26 0.394 0.399 0.404 dep 0.05 0.10 0.20 0.002 0.004 0.008 e p1 1.40 1.50 1.60 0.055 0.059 0.063 h 14.70 15.10 15.50 0.579 0.594 0.610 2.54bsc 0.100bsc 0.25 bsc 0.01 bsc 2.50 ref 0.098 ref inch symbol mm inch symbol mm
RU30160S ruichips semiconductor co., ltd rev. a? dec., 2013 8 www.ruichips.com customer service worldwide sales and service: sales@ruichips.com technical support: technical@ruichips.com investor relations contacts: investor@ruichips.com marcom contact: marcom@ruichips.com editorial contact: editorial@ruichips.comm hr contact: hr@ruichips.com legal contact: legal@ruichips.com shen zhen ruichips semiconductor co., ltd room 501, the 5floor an tong industrial building, no.207 mei hua road fu tian area shen zhen city, china tel: (86 - 755) 8311 - 5334 fax: (86 - 755) 8311 - 4278 e - mail: sales - sz@ruichips.com


▲Up To Search▲   

 
Price & Availability of RU30160S

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X